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CES2309

P-Channel MOSFET

CES2309 Features

* -20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D PRELIMINARY G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage

CES2309 Datasheet (131.99 KB)

Preview of CES2309 PDF

Datasheet Details

Part number:

CES2309

Manufacturer:

Chino-Excel Technology

File Size:

131.99 KB

Description:

P-channel mosfet.

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CES2309 P-Channel MOSFET Chino-Excel Technology

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