CES2301 Datasheet, Mosfet, CET

CES2301 Features

• Mosfet -20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 pac

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Part number:

CES2301

Manufacturer:

CET

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372.41kb

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📄 Datasheet

Description:

P-channel mosfet.

TAGS

CES2301

CET

📁 Related Datasheet

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CES2304 - N-Channel MOSFET (CET)
CES2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 2.8A, RDS(ON) = 65mΩ (typ) @VGS = 10V. RDS(ON) = 90mΩ (typ) @VGS = 4.5V. Hig.

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CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100m.

CES2307 - P-Channel MOSFET (Chino-Excel Technology)
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CES2307A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dens.

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CES2308 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. High dense cell.

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