CES2312, CES2312_Chino N-Channel MOSFET

Chino-Excel Technology

Description

CES2312 N-Channel Enhancement Mode Field Effect Transistor .

📥 Download Datasheet

CES2312 Datasheet Preview — This datasheet PDF includes multiple part numbers: CES2312, CES2312_Chino. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: CES2312, CES2312_Chino
Manufacturer: Chino-Excel Technology
File Size: 297.80 KB
Datasheet: CES2312_Chino-ExcelTechnology.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: CES2312, CES2312_Chino.
Please refer to the document for exact specifications by model.

Features

* 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Con

CES2312 Distributors

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CES2312_Chino N-Channel MOSFET Chino-Excel Technology

Chino-Excel Technology CES2312-like datasheet