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CES2306 N-Channel MOSFET

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Description

CES2306 N-Channel Enhancement Mode Field Effect Transistor .

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Datasheet Specifications

Part number
CES2306
Manufacturer
CET
File Size
393.06 KB
Datasheet
CES2306-CET.pdf
Description
N-Channel MOSFET

Features

* 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. High dense cell design for extremely low RDS(ON). Lead-free plating ; RoHS compliant. Rugged and reliable. SOT-23 package. DS G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted P

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