CES2307 Datasheet, Mosfet, Chino-Excel Technology

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Part number:

CES2307

Manufacturer:

Chino-Excel Technology

File Size:

427.88kb

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📄 Datasheet

Description:

P-channel mosfet.

TAGS

CES2307

Chino-Excel Technology

📁 Related Datasheet

CES2301 - P-Channel MOSFET (CET)
CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High den.

CES2302 - N-Channel MOSFET (Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design.

CES2302 - N-Channel MOSFET (VBsemi)
CES2302-VB CES2302-VB Datasheet N-Channel 20 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 a.

CES2303 - P-Channel MOSFET (Chino-Excel Technology)
CES2303 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -1.9A, RDS(ON) = 150mΩ (typ) @VGS = -10V. RDS(ON) = 230mΩ (typ) @VGS = -4.5V.

CES2304 - N-Channel MOSFET (CET)
CES2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 2.8A, RDS(ON) = 65mΩ (typ) @VGS = 10V. RDS(ON) = 90mΩ (typ) @VGS = 4.5V. Hig.

CES2305 - P-Channel MOSFET (Chino-Excel Technology)
CES2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. RDS(ON) = 120m.

CES2306 - N-Channel MOSFET (CET)
CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100m.

CES2307A - P-Channel MOSFET (CET)
CES2307A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dens.

CES2308 - N-Channel MOSFET (Chino-Excel Technology)
CES2308 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. High dense cell.

CES2309 - P-Channel MOSFET (Chino-Excel Technology)
CES2309 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dens.