CES2305
Chino-Excel Technology
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P-channel mosfet.
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📁 Related Datasheet
CES2301 - P-Channel MOSFET
(CET)
CES2301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V.
High den.
CES2302 - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 3.0A, RDS(ON) = 72mΩ @VGS = 4.5V. RDS(ON) = 110mΩ @VGS = 2.5V. High dense cell design.
CES2302 - N-Channel MOSFET
(VBsemi)
CES2302-VB
CES2302-VB Datasheet
N-Channel 20 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 V
20
0.042 a.
CES2303 - P-Channel MOSFET
(Chino-Excel Technology)
CES2303
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -1.9A, RDS(ON) = 150mΩ (typ) @VGS = -10V. RDS(ON) = 230mΩ (typ) @VGS = -4.5V.
CES2304 - N-Channel MOSFET
(CET)
CES2304
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 2.8A, RDS(ON) = 65mΩ (typ) @VGS = 10V. RDS(ON) = 90mΩ (typ) @VGS = 4.5V.
Hig.
CES2306 - N-Channel MOSFET
(CET)
CES2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100m.
CES2307 - P-Channel MOSFET
(Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense cell des.
CES2307A - P-Channel MOSFET
(CET)
CES2307A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
High dens.
CES2308 - N-Channel MOSFET
(Chino-Excel Technology)
CES2308
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 5.4A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 36mΩ @VGS = 2.5V. High dense cell.
CES2309 - P-Channel MOSFET
(Chino-Excel Technology)
CES2309
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dens.