CES2312 Datasheet | Specifications & PDF Download

CES2312 www.VBsemi.com CES2312 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.

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CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense cell

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