
CG2H30070F - RF Power GaN HEMT
CG2H30070F
70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT
Description
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobilit
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CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN .
CG2H30070F Distributor