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CG2H40120 Datasheet, Features, Application

CG2H40120 28V RF Power GaN HEMT

CG2H40120 120 W, 28 V, RF Power GaN HEMT Descripti.

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CG2H40120 - 28V RF Power GaN HEMT

CG2H40120 120 W, 28 V, RF Power GaN HEMT Description The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th.
1.0 · rating-1
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