
CG2H40120 - 28V RF Power GaN HEMT
CG2H40120
120 W, 28 V, RF Power GaN HEMT
Description
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th
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CG2H40120 120 W, 28 V, RF Power GaN HEMT Descripti.
CG2H40120 Distributor