CGH35015F Datasheet, Features, Application
CGH35015F GaN HEMT
PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, Ga.
Cree
CGH35015F - GaN HEMT
PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor desi.
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