
CGH35030F - GaN HEMT
PRELIMINARY
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEM
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PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, Ga.
CGH35030F Distributor