Cree
CGHV1J006D - GaN HEMT Die
CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon
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CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description.
Cree
Wolfspeed
CGHV1J006D Distributor
