CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description.
Cree
CGHV1J006D - GaN HEMT Die
CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon.
Wolfspeed
CGHV1J006D - GaN HEMT Die
CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) .