
CGHV27100 - GaN HEMT
CGHV27100
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT) is d
(8 views)
CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEM.
CGHV27100 Distributor