CGHV27200 (Cree)
GaN HEMT
PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HE
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PRELIMINARY CGHV27200 200 W, 2500-2700 MHz,.
GaN HEMT
CGHV27200 Distributor
