CGHV35150 (Cree)
GaN HEMT
CGHV35150
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor
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CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT fo.
GaN HEMT
CGHV35150 Distributor
