CPD Datasheet | Specifications & PDF Download

PROCESS Schottky Rectifier CPD107 3 Amp Schottky Rectifier Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalizatio

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SERVICE MANUAL CPD-G520 US Model Canadian Model N. Hemisphere Model S. Hemisphere Model Equator Model Chassis No. SCC-L33E-A CR1 CHASSIS CRT Viewab

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www.DataSheet.co.kr KAOHSIUNG HITACHI ELECTRONICS CO., LTD. FOR MESSRS: DATE: Nov. 29th 2008 CUSTOMER’S ACCEPTANCE SPECIFICATIONS TX14D11VM1CPD C

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■CW78M00 ：-55℃～125℃ ： F-1 1-；2-；3- TO-257 1-；2-；3- TO-220 1-；2-；3- TO-252 1-；2-；3- SMD-0.5/1 1-；2-；3- Vin Vout IO=350mA SV IO=200mA

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w eMANUAL SERVICE e h S REVISED a t a D . w w U 4 t . m o c CPD-110GS/110EST CPD-110GS US Model Canadian Model Chassis No. SCC-L27A-A CPD-110EST

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w eMANUAL SERVICE e h S REVISED a t a D . w w U 4 t . m o c CPD-110GS/110EST CPD-110GS US Model Canadian Model Chassis No. SCC-L27A-A CPD-110EST

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

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CPD-E500/E500E SERVICE MANUAL CPD-E500 US Model Canadian Model Chassis No. SCC-L22P-A CPD-E500E AEP Model Chassis No. SCC-L22N-A G1 CHASSIS CRT Vi

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) These transistors are designed for general purpose amplifie

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■CW78M00 ：-55℃～125℃ ： F-1 1-；2-；3- TO-257 1-；2-；3- TO-220 1-；2-；3- TO-252 1-；2-；3- SMD-0.5/1 1-；2-；3- Vin Vout IO=350mA SV IO=200mA

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■CW78M00 ：-55℃～125℃ ： F-1 1-；2-；3- TO-257 1-；2-；3- TO-220 1-；2-；3- TO-252 1-；2-；3- SMD-0.5/1 1-；2-；3- Vin Vout IO=350mA SV IO=200mA

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SMD ESD Protection Diode SMD Diodes Specialist CPDT-24V Features (RoHS Device) Common anode ESD protection. IEC61000-4-2 8kV(Contact), 15kV(air). S

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TEXAS INSTRUMENTS-PRODUCTION DATA Tiva™ TM4C1294NCPDT Microcontroller DATA SHEET DS-TM4C1294NCPDT-15863.2743 SPMS433B Copyright © 2007-2014 Te xa s

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■CW78M00 ：-55℃～125℃ ： F-1 1-；2-；3- TO-257 1-；2-；3- TO-220 1-；2-；3- TO-252 1-；2-；3- SMD-0.5/1 1-；2-；3- Vin Vout IO=350mA SV IO=200mA

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www.DataSheet4U.com TM RE N OT C OM ME DF NDE OR N E ES WD IGN S ICL8038 April 2001 File Number 2864.4 Data Sheet Precision Waveform Genera

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AiT Semiconductor Inc. www.ait-ic.com BC846BPDW~BC848CPDW GENERAL PURPOSE TRANSISTOR NPN/PNP DUAL (COMPLIMENTARY) DESCRIPTION FEATURES These trans

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PROCESS General Purpose Rectifier 500mA Glass Passivated Rectifier Chip CPD04 www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness A

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PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back

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Features ● Protects one data or power line ● Ultra low leakage: nA level ● Operating voltage: 12V ● Low clamping voltage Complies with following stand

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High Current Inductor For Digital AMP - CPD1370 Series Outline: Magnetic shielded structure: excellent resistance to electromagnetic interference(EMI

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