CPD24 Datasheet | Central Semiconductor

PROCESS CPD24 Fast Recovery Rectifier 1 Amp Glass Passivated Rectifier Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 51 x 51 MILS 11 MILS 35 x 35 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,250 PRINCIPAL DEVICE TYPES 1N4933 thru 1N4937 1N4942 thru 1N4948 1N5615 thru 1N5623 CMR1F-02M Series BACKSIDE CATHODE R1 R3 (29-April 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R3 (29-April 2010) w w w. c e n t r a l s e m i . c o...