CPD16 Datasheet | Central Semiconductor

PROCESS Ultra Fast Rectifier 1 Amp Glass Passivated Rectifier Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 51 x 51 MILS 14 MILS 34 x 34 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 4,250 PRINCIPAL DEVICE TYPES UES1001 thru UES1003 UF4001 thru UF4007 CMR1U-01 Series CMR1U-01M Series BACKSIDE CATHODE R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o...