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PROCESS
Ultra Fast Rectifier
CPD18
8 Amp Glass Passivated Rectifier Chip
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PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 100 x 100 MILS 14 MILS 78 x 78 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 1,170 PRINCIPAL DEVICE TYPES 1N5807 thru 1N5811 UES1301 thru UES1306 UES1401 thru UES1403 CUDD8-02 Series
BACKSIDE CATHODE
R4 (22-March 2010)
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PROCESS
CPD18
Typical Electrical Characteristics
R4 (22-March 2010)
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CPD18 Datasheet
