CPD04 Datasheet | Central Semiconductor

PROCESS General Purpose Rectifier 500m A Glass Passivated Rectifier Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 26 x 26 MILS 8.5 MILS 14 x 14 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 18,000 PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o...