CPD06 Datasheet | Central Semiconductor

PROCESS General Purpose Rectifier 3 Amp Glass Passivated Rectifier Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 89 x 89 MILS 10.2 MILS 66 x 66 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,490 PRINCIPAL DEVICE TYPES 1N5400 thru 1N5408 1N5550 thru 1N5554 1N5624 thru 1N5627 CMR3-02 Series BACKSIDE CATHODE R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o...