CPD15 Datasheet | Central Semiconductor

PROCESS Ultra Fast Rectifier Central 500m A Glass Passivated Rectifier Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 25 x 25 MILS 9.5 MILS 14.5 x 14.5 MILS Au - 5,000Å Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 18,080 PRINCIPAL DEVICE TYPES CBRHDU-02 Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 .centralsemi. R2 (19-September 2003) Central PROCESS Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 .centralsemi. R2 (19-September...