CPD17 Datasheet | Central Semiconductor

PROCESS Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip .. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 88 x 88 MILS 14 MILS 69 x 69 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,200 PRINCIPAL DEVICE TYPES 1N5802 thru 1N5806 UES1101 thru UES1106 CMR3U-01 Series BACKSIDE CATHODE R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o...