CR14 Datasheet | Specifications & PDF Download

BCR148 /SEMH2 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=4

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BCR148 /SEMH2 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=4

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BCR146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2 =22kΩ)

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BCR148 /SEMH2 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=4

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BCR149 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ) BCR149

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Specification of CR14250SE High Capacity Cylindrical Laser Sealed Primary Lithium Battery Nominal Capacity *1 Nominal Voltage Standard Discharge Curre

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BCR 141 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) T

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BCR 141S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two (galvanic) internal isolated Transistors

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T echnical Specification CR14250 Lithium Manganese Dioxide(Li-MnO2)Batteries Ø6.4mm Max ENERGY VERY ENDURE 25.0mm Max Ø14.5mm Max Nominal capacit

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BCR148 /SEMH2 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=4

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BCR 148W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=47kΩ)

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BCR149 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ) BCR149

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Replaces DS6046-1 DCR1460F30 Phase Control Thyristor DS6046-2 June 2019 (LN38866) FEATURES  Double Side Cooling  High Surge Capability APPLIC

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BCR148 /SEMH2 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit driver circuit • Built in bias resistor (R1=47kΩ, R2=4

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BCR 148S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvaniv) internal isolated Tran

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BCR149 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 47kΩ) BCR149

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DCR1474SY DCR1474SY Phase Control Thyristor Advance Information Replaces January 2000 version, DS4649-5.0 DS4649-6.0 July 2001 FEATURES s Double Sid

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D d Cell Type CR14250SE Specifications Nominal Voltage (V) Nominal Capacity (mAh) *1 Standard Discharge Current (mA) Operating Temperature Range (℃)

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BCR 141W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

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BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=47kΩ)

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