CR8PM Datasheet | Specifications & PDF Download

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM OUTLINE DRAWING 10.5 MAX 5.2 Dimensions in

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BCR8PM-12LE 600V – 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA • Viso : 1500 V Outline RENES

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BCR8PM-14L Triac Medium Power Use REJ03G0308-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 700 V www.DataSheet4U.com • IFGTI, IRGTI, I

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isc Thyristors INCHANGE Semiconductor BCR8PM-14L DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum

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BCR8PM-20L Triac Medium Power Use REJ03G0311-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 1000 V www.DataSheet4U.com • IFGTI, IRGTI,

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BCR8PM-16LG Triac Medium Power Use Features  IT (RMS) : 8 A  VDRM : 800 V  IFGTI, IRGTI, IRGT III : 30 mA  Viso : 2000 V Outline RENESAS Package c

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isc Thyristors INCHANGE Semiconductor BCR8PM-12LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimu

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isc Triacs BCR8PM14L FEATURES ·With TO-220F package ·Glass passivated triacs in a plastic envelope, for use in Applications requiring high bidirecti

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BCR8PM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 8 Amperes/400-600 Volts OUTLINE DRAWING C 5.2 1.2

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BCR8PM-16L Triac Medium Power Use REJ03G0310-0100 Rev.1.00 Aug.20.2004 Features • IT (RMS) : 8 A • VDRM : 800 V www.DataSheet4U.com • IFGTI, IRGTI, I

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isc Thyristors INCHANGE Semiconductor BCR8PM-14LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimu

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-20 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-20 OUTLINE DRAWING Dimensions in mm 10

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BCR8PM-16LA Triac Medium Power Use Preliminary Datasheet R07DS0144EJ0200 (Previous: REJ03G0310-0100) Rev.2.00 Sep 16, 2010 Features  IT (RMS) : 8 A

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BCR8PM-12LD Triac Medium Power Use Features  IT (RMS) : 8 A  VDRM : 600 V  IFGTI , IRGTI, IRGT III : 50 mA  Viso : 2000 V Outline RENESAS Package

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BCR8PM-14LE 700V – 8A - Triac Medium Power Use Features • IT (RMS) : 8 A • VDRM : 700 V • IFGTI, IRGTI, IRGTIII : 30 mA • Viso : 1500 V Outline RENESA

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-18 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-18 OUTLINE DRAWING Dimensions in mm 10

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isc Thyristors INCHANGE Semiconductor BCR8PM-12LA DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimu

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BCR8PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0461-0200 Rev.2.00 Nov.08.2004 Features T (RMS

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8PM-14 MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8PM-14 OUTLINE DRAWING Dimensions in mm 10

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