CS4N60F Datasheet | Specifications & PDF Download

N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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www.DataSheet4U.com CS4N60(F) CS4N60(F) VDMOS 1. CS4N60(F) N 600V VDMOS ，、 。 ： ● ● ● ● ： CS4N60 CS4N60F TO-220 TO-220F VDSS 6

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R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID VDSS Rdson_max （Vgs=10V） Qg-typ 4.0 A 600 V 2.35Ω 11.8nC    LED APPLICATIONS  Hi

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Silicon N-Channel Power MOSFET CS4N60F A9TDY ○R General Description： CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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Silicon N-Channel Power MOSFET CS4N60F A9R ○R General Description： CS4N60F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

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Huajing Discrete Devices ○R Silicon N-Channel Power MOSFET CS4N60F A9HD General Description： CS4N60F A9HD, the silicon N-channel Enhanced VDMOSF

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