CT-06 Datasheet | Specifications & PDF Download

NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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MBR2060CT-MBR20100CT High-reliability discrete products and engineering services since 1977 20A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (h

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RBV25005-RBV2510 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A Features Rating to 1000V PRV Surge overload rating to 200 Am

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MAAMSS0060 Broadband CATV Amplifier 50 - 1000 MHz Features • 75 Ω Input / Output Match • CTB: -75 dBc • Noise Figure: 1.8 dB • Gain: 17 dB, 20 dB • Le

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LC1206A Rev.A AC/DC v v v 800V v v 0.10W v 、 v ， v OTP v 2013-V5 v 6W， 8W v ,, ² ² ² LC1206A 、 PWM ， 。 ， 、， ，， 。 ，。 800V， 90

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Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm

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N-CHANNEL 60V - 0.015 W - 50A TO-220 STripFET™ POWER MOSFET TYPE STP1806 ■ ■ ■ STP1806 VDSS 60 V RDS(on) < 0.018 W ID 50 A TYPICAL RDS(on) = 0.01

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STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II™ Power MOSFET General features Type STP60NF06 VDSS 60V RDS(on) <0.016Ω ID 60A ■ Except

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MASTER INSTRUMENT CORPORATION SINGLE-PHASE BRIDGE RECTIFIER RS401 THRU RS407 VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Amperes FEATURES l Low co

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http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

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® MC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS s s s s s s OUTPUT SWITCH CURRENT IN EXCESS OF 1.5A 2% REFERENCE ACCURACY LOW QUIESCENT CURRE

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www.DataSheet.co.kr Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2SC1061 DESCRIPTION With TO-220 package Low saturatio

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AO4406A 30V N-Channel MOSFET General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This

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www.DataSheet4U.com Thermoelectric Cooler TEC1-12706 Performance Specifications Hot Side Temperature (ºC) Qmax (Watts) Delta Tmax (ºC) Imax (Amps) V

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.05Ω ·Fast Switching Speed ·100% avalanche tested ·Minimum Lo

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SR502 - SR506 HIGH CURRENT SCHOTTKY BARRIER RECTIFIER Features · · · · · High Current Capability and Low Forward Drop High Surge Capacity Guard Ring f

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