CT Micro
CT2N7002E-R3 - N-Channel MOSFET
CT2N7002E-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 60 V • Drain-Source On-Resistance
RDS(ON) 4.15Ω, at VGS= 10V
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CT2N7002E-R3 N-Channel Enhancement MOSFET Feature.
CT Micro
CT2N7002E-R3 Distributor
