CT2N7002E-R3 N-Channel MOSFET

CT Micro

Description

CT2N7002E-R3 N-Channel Enhancement MOSFET .
The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: CT2N7002E-R3
Manufacturer: CT Micro
File Size: 2.04 MB
Datasheet: CT2N7002E-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 60 V
* Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃
* Continuous Drain Current at TA=25 ,ID = 500mA
* Advanced high cell density Trench Technology
* RoHS Complia

Applications

* Cellular phone
* Notebook

CT2N7002E-R3 Distributors

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CT2N7002E-R3 N-Channel MOSFET CT Micro

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