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CT2N7002E-R3 Datasheet - CT Micro

N-Channel MOSFET

CT2N7002E-R3 Features

* Drain-Source Breakdown Voltage VDSS 60 V

* Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃

* Continuous Drain Current at TA=25 ,ID = 500mA

* Advanced high cell density Trench Technology

* RoHS Complia

CT2N7002E-R3 General Description

The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Package Outline Schematic Drain Drain Gate Source Gate Sourc.

CT2N7002E-R3 Datasheet (2.04 MB)

Preview of CT2N7002E-R3 PDF

Datasheet Details

Part number:

CT2N7002E-R3

Manufacturer:

CT Micro

File Size:

2.04 MB

Description:

N-channel mosfet.

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CT2N7002E-R3 N-Channel MOSFET CT Micro

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