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CT2N7002E-R3 N-Channel MOSFET

CT2N7002E-R3 Description

CT2N7002E-R3 N-Channel Enhancement MOSFET .
The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

CT2N7002E-R3 Features

* Drain-Source Breakdown Voltage VDSS 60 V
* Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃
* Continuous Drain Current at TA=25 ,ID = 500mA
* Advanced high cell density Trench Technology
* RoHS Complia

CT2N7002E-R3 Applications

* Cellular phone
* Notebook

📥 Download Datasheet

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Datasheet Details

Part number
CT2N7002E-R3
Manufacturer
CT Micro
File Size
2.04 MB
Datasheet
CT2N7002E-R3-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
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