CT2N7002E-R3 Datasheet (CT Micro)

CT2N7002E-R3, N-Channel MOSFET

The CT2N7002E-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Package Outline Schematic Drain Drain Gate Source Gate Sourc

CT2N7002E-R3 Features

* Drain-Source Breakdown Voltage VDSS 60 V

* Drain-Source On-Resistance RDS(ON) 4.15Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.7Ω, at VGS= 5.0V, IDS= 500mA ℃

* Continuous Drain Current at TA=25 ,ID = 500mA

* Advanced high cell density Trench Technology

* RoHS Complia