CT2306-R3 - N-Channel MOSFET

CT Micro

CT2306-R3 Datasheet Preview — Preview of CT2306-R3 PDF

Datasheet Details

Part number	CT2306-R3
Manufacturer	CT Micro
File Size	548.08 KB
Description	N-Channel MOSFET
Datasheet	CT2306-R3-CTMicro.pdf

CT2306-R3 Product details

Description

The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Power Management DC-DC Converter Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CT2306-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Dra

Features

Drain-Source Breakdown Voltage VDSS 30 V.
Drain-Source On-Resistance.
RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃.
Continuous Drain Current at TA=25 ID = 4.7A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

📁 CT2306-R3 Similar Datasheet

CT230802 - Split Dual SCR (Powerex Power Semiconductors)
CT204 - 24A 4pole Contactor (Proteus)
CT2077 - Interface Driver (CTI)
CT20AS-8 - IGBT (Mitsubishi Electric Semiconductor)
CT20ASJ-8 - IGBT (Mitsubishi Electric Semiconductor)
CT20ASL-8 - IGBT (Mitsubishi Electric Semiconductor)
CT20R13 - Color TV Manual (Panasonic)
CT20R13U - Color TV Manual (Panasonic)

Other Datasheets by CT Micro

CT2300-R3 - N-Channel MOSFET
CT2301-R3 - P-Channel MOSFET
CT2321-R3 - P-Channel MOSFET
CT2323-R3 - P-Channel MOSFET
CT2501 - Phototransistor Optocoupler
CT2601 - High Speed Logic Gate Optocoupler

Published: May 20, 2020 |