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CT2306-R3

N-Channel MOSFET

CT2306-R3 Features

* Drain-Source Breakdown Voltage VDSS 30 V

* Drain-Source On-Resistance

* RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃

* Continuous Drain Current at TA=25 ID = 4.7A

* Advanced high cell density Trench Technology

* RoHS Compl

CT2306-R3 General Description

The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Applications

* Power Management

* DC-DC Converter

* Load Switch Package Outline Schematic Drai.

CT2306-R3 Datasheet (548.08 KB)

Preview of CT2306-R3 PDF

Datasheet Details

Part number:

CT2306-R3

Manufacturer:

CT Micro

File Size:

548.08 KB

Description:

N-channel mosfet.

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CT2306-R3 N-Channel MOSFET CT Micro

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