CT2306-R3 N-Channel MOSFET

CT Micro

Description

CT2306-R3 N-Channel Enhancement MOSFET .
The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.

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Datasheet Specifications

Part number: CT2306-R3
Manufacturer: CT Micro
File Size: 548.08 KB
Datasheet: CT2306-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 30 V
* Drain-Source On-Resistance
* RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A ℃
* Continuous Drain Current at TA=25 ID = 4.7A
* Advanced high cell density Trench Technology
* RoHS Compl

Applications

* Applications
* Power Management
* DC-DC Converter
* Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CT2306-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symb

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CT2306-R3 N-Channel MOSFET CT Micro

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