CT2323-R3
CT Micro
2.03MB
P-channel mosfet. The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of
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CT2321-R3 - P-Channel MOSFET
(CT Micro)
CT2321-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance
RDS(ON) 42mΩ, at VGS= - 4.5.
CT2300-R3 - N-Channel MOSFET
(CT Micro)
CT2300-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance
RDS(ON) 22mΩ, at VGS= 4.5V, I.
CT2301-R3 - P-Channel MOSFET
(CT Micro)
CT2301-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance
RDS(ON) 85mΩ, at VGS= - 4.5.
CT2306-R3 - N-Channel MOSFET
(CT Micro)
CT2306-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance
• RDS(ON) 25mΩ, at VGS= 10V, .
CT230802 - Split Dual SCR
(Powerex Power Semiconductors)
CT230802
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Split Dual SCR POW-R-BLOK™ Modules
20 Amperes/800 Volts
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CT204 - 24A 4pole Contactor
(Proteus)
Product Data Sheet
Product Code:
Issue No. Issue Date:
CT204
A
Description
24A 4pole Contactor
11.08.09
General Characteristics
Standard
IEC6.
CT2077 - Interface Driver
(CTI)
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CT20AS-8 - IGBT
(Mitsubishi Electric Semiconductor)
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20AS-8
STROBE FLASHER USE
CT20AS-8
OUTLINE DRAWING
6.5 5.0 ± 0.2
4
Dimensions in mm
5.5 ± 0.2
1.5.
CT20ASJ-8 - IGBT
(Mitsubishi Electric Semiconductor)
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20ASJ-8
STROBE FLASHER USE
CT20ASJ-8
OUTLINE DRAWING
1.5 ± 0.2
6.5 5.0 ± 0.2
4
Dimensions in mm
0..
CT20ASL-8 - IGBT
(Mitsubishi Electric Semiconductor)
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20ASL-8
STROBE FLASHER USE
CT20ASL-8
OUTLINE DRAWING
6.5 5.0 ± 0.2
4
Dimensions in mm
5.5 ± 0.2
1.