Datasheet4U Logo Datasheet4U.com

CT2323-R3

P-Channel MOSFET

CT2323-R3 Features

* Drain-Source Breakdown Voltage VDSS - 20 V

* Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at VGS= - 1.8V, IDS= - 2.0A ℃

* Continuous Drain Current at TA=25 ID = - 4.2A

* Advanced high cel

CT2323-R3 General Description

The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Jun, 2015 CT2323.

CT2323-R3 Datasheet (2.03 MB)

Preview of CT2323-R3 PDF

Datasheet Details

Part number:

CT2323-R3

Manufacturer:

CT Micro

File Size:

2.03 MB

Description:

P-channel mosfet.

📁 Related Datasheet

CT2321-R3 P-Channel MOSFET (CT Micro)

CT2300-R3 N-Channel MOSFET (CT Micro)

CT2301-R3 P-Channel MOSFET (CT Micro)

CT2306-R3 N-Channel MOSFET (CT Micro)

CT230802 Split Dual SCR (Powerex Power Semiconductors)

CT204 24A 4pole Contactor (Proteus)

CT2077 Interface Driver (CTI)

CT20AS-8 IGBT (Mitsubishi Electric Semiconductor)

CT20ASJ-8 IGBT (Mitsubishi Electric Semiconductor)

CT20ASL-8 IGBT (Mitsubishi Electric Semiconductor)

TAGS

CT2323-R3 P-Channel MOSFET CT Micro

Image Gallery

CT2323-R3 Datasheet Preview Page 2 CT2323-R3 Datasheet Preview Page 3

CT2323-R3 Distributor