CT2300-R3 N-Channel MOSFET

CT Micro

Description

CT2300-R3 N-Channel Enhancement MOSFET .
The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.

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CT2300-R3 Datasheet Preview — Preview of CT2300-R3 PDF

Datasheet Specifications

Part number: CT2300-R3
Manufacturer: CT Micro
File Size: 2.02 MB
Datasheet: CT2300-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A ℃
* Continuous Drain Current at TA=25 ID = 4.0A
* Advanced high cell density Trench Technology
* RoHS Compliance

Applications

* Power Management

CT2300-R3 Distributors

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CT2300-R3 N-Channel MOSFET CT Micro

CT Micro CT2300-R3-like datasheet