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CT2300-R3

N-Channel MOSFET

CT2300-R3 Features

* Drain-Source Breakdown Voltage VDSS 20 V

* Drain-Source On-Resistance RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A ℃

* Continuous Drain Current at TA=25 ID = 4.0A

* Advanced high cell density Trench Technology

* RoHS Compliance

CT2300-R3 General Description

The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 .

CT2300-R3 Datasheet (2.02 MB)

Preview of CT2300-R3 PDF

Datasheet Details

Part number:

CT2300-R3

Manufacturer:

CT Micro

File Size:

2.02 MB

Description:

N-channel mosfet.

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TAGS

CT2300-R3 N-Channel MOSFET CT Micro

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