CT2300-R3 Datasheet (CT Micro)

CT2300-R3, N-Channel MOSFET

The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2

CT2300-R3 Features

* Drain-Source Breakdown Voltage VDSS 20 V

* Drain-Source On-Resistance RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A ℃

* Continuous Drain Current at TA=25 ID = 4.0A

* Advanced high cell density Trench Technology

* RoHS Compliance