CT2301-R3 P-Channel MOSFET

CT Micro

Description

CT2301-R3 P-Channel Enhancement MOSFET .
The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.

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Datasheet Specifications

Part number: CT2301-R3
Manufacturer: CT Micro
File Size: 1.98 MB
Datasheet: CT2301-R3-CTMicro.pdf
Description: P-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS - 20 V
* Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃
* Continuous Drain Current at TA=25 ID = - 3.0A
* Advanced high cell density Trench Technology
* RoH

Applications

* Power Management
* Portable Equipment
* Battery Powered System

CT2301-R3 Distributors

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CT2301-R3 P-Channel MOSFET CT Micro

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