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CT2301-R3

P-Channel MOSFET

CT2301-R3 Features

* Drain-Source Breakdown Voltage VDSS - 20 V

* Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃

* Continuous Drain Current at TA=25 ID = - 3.0A

* Advanced high cell density Trench Technology

* RoH

CT2301-R3 General Description

The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4.

CT2301-R3 Datasheet (1.98 MB)

Preview of CT2301-R3 PDF

Datasheet Details

Part number:

CT2301-R3

Manufacturer:

CT Micro

File Size:

1.98 MB

Description:

P-channel mosfet.

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CT2301-R3 P-Channel MOSFET CT Micro

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