CT Micro
CTLM17NS10-R3 - N-Channel MOSFET
CTLM17NS10-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 100 V • Drain-Source On-Resistance
RDS(ON) 3Ω, at VGS= 10V,
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CTLM17NS10-R3 N-Channel Enhancement MOSFET Featur.
CT Micro
CTLM17NS10-R3 Distributor
