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CTLM17NS10-R3 - N-Channel MOSFET

CTLM17NS10-R3 Description

CTLM17NS10-R3 N-Channel Enhancement MOSFET .
The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

CTLM17NS10-R3 Features

* Drain-Source Breakdown Voltage VDSS 100 V
* Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃
* Continuous Drain Current at TA=25 ID =0.17A
* Advanced high cell density Trench Technology
* RoHS Compliance & Ha

CTLM17NS10-R3 Applications

* Power Management
* LCD Display inverter
* DC/DC Converter
* Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTLM17NS10-R3 N-Channel Enhancement MOSFET Absolute Maximum R

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Datasheet Details

Part number
CTLM17NS10-R3
Manufacturer
CT Micro
File Size
527.19 KB
Datasheet
CTLM17NS10-R3-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
CT Micro CTLM17NS10-R3-like datasheet