CTLM17NS10-R3 - N-Channel MOSFET
The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications * Power Management * LCD Display inve
CTLM17NS10-R3 Features
* Drain-Source Breakdown Voltage VDSS 100 V
* Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃
* Continuous Drain Current at TA=25 ID =0.17A
* Advanced high cell density Trench Technology
* RoHS Compliance & Ha
