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CTLM17NS10-R3 Datasheet - CT Micro

CTLM17NS10-R3 N-Channel MOSFET

The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications * Power Management * LCD Display inve.

CTLM17NS10-R3 Features

* Drain-Source Breakdown Voltage VDSS 100 V

* Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃

* Continuous Drain Current at TA=25 ID =0.17A

* Advanced high cell density Trench Technology

* RoHS Compliance & Ha

CTLM17NS10-R3-CTMicro.pdf

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Datasheet Details

Part number:

CTLM17NS10-R3

Manufacturer:

CT Micro

File Size:

527.19 KB

Description:

N-channel mosfet.

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CTLM17NS10-R3 CTLM17NS10-R3 N-Channel MOSFET CT Micro

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