Description
CTLM17NS10-R3 N-Channel Enhancement MOSFET .
The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* Drain-Source Breakdown Voltage VDSS 100 V
* Drain-Source On-Resistance
RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA
℃
* Continuous Drain Current at TA=25 ID =0.17A
* Advanced high cell density Trench Technology
* RoHS Compliance & Ha
Applications
* Power Management
* LCD Display inverter
* DC/DC Converter
* Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 1 Jun, 2015
CTLM17NS10-R3 N-Channel Enhancement MOSFET
Absolute Maximum R