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CTLM16PS05-R3 - P-Channel MOSFET

CTLM16PS05-R3 Description

CTLM16PS05-R3 P-Channel Enhancement MOSFET .
The CTLM16PS05-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchrono.

CTLM16PS05-R3 Features

* Drain-Source Breakdown Voltage VDSS - 50 V
* Drain-Source On-Resistance RDS(ON) 2Ω, at VGS= - 10V, IDS= - 100mA RDS(ON) 2Ω, at VGS= - 5.0V, IDS= - 100mA ℃
* Continuous Drain Current at TA=25 ID = - 160mA
* Advanced high cell density Trench Technology
* RoHS C

CTLM16PS05-R3 Applications

* Power Management
* Portable Equipment
* Battery Powered System
* DC/DC Converter

📥 Download Datasheet

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Datasheet Details

Part number
CTLM16PS05-R3
Manufacturer
CT Micro
File Size
538.11 KB
Datasheet
CTLM16PS05-R3-CTMicro.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET CT Micro
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