Toshiba CBS10S30 - Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathod (16 views)
KEC E35A2CBS - STACK SILICON DIFFUSED DIODE SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=35A. Repetive Peak Reverse Voltage : V (12 views)
Hamamatsu Corporation P380-7R - CbS photoconductive cell VISIBLE DETECTOR CdS photoconductive cell Metal package type Hermetically sealed for high reliability CdS photoconductive cells utilize photoconduc (11 views)
Mitsubishi PM200CBS060 - INTELLIGENT POWER MODULES MITSUBISHI MITSUBISHI MODULES> PM200CBS060 PM200CBS060 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULAT (11 views)
KEC E50A2CBS - STACK SILICON DIFFUSED DIODE SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : V (11 views)
Advanced Semiconductor CBSL1 - NPN SILICON RF POWER TRANSISTOR CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipmen (10 views)
Advanced Semiconductor CBSL30 - NPN SILICON RF POWER TRANSISTOR CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The (10 views)
Fairchild Semiconductor FCBS0550 - Smart Power Module (SPM) FCBS0550 Smart Power Module (SPM) September 8, 2005 FCBS0550 Smart Power Module (SPM) Features • UL Certified No.E209204(SPM27-BA package) • 500V-5 (10 views)
UTC 6N60-CBS - N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 6N60-CBS Preliminary 6.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60-CBS is a high voltage power MOSF (10 views)
UTC 2N60-CBS - N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-CBS 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CBS is a high voltage power MOSFET and is designe (10 views)
Advanced Semiconductor CBSL60B - NPN SILICON RF POWER TRANSISTOR CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FULL R .100x45° C D (9 views)
Toshiba Semiconductor CBS05F30 - Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial CBS05F30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.38 V (typ.) (2 (9 views)
Advanced Semiconductor CBSL15 - NPN SILICON RF POWER TRANSISTOR CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for .040x45° C B 2XØ.130 PACKAGE STYLE .230 6L FLG A 4X .025 R .115 . (8 views)
Advanced Semiconductor CBSL6 - NPN SILICON RF POWER TRANSISTOR CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G (8 views)