UTC 2N60-CBS - N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-CBS 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CBS is a high voltage power MOSFET and is designe Rating: 1 ★ (5 votes)
Advanced Semiconductor CBSL15 - NPN SILICON RF POWER TRANSISTOR CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for .040x45° C B 2XØ.130 PACKAGE STYLE .230 6L FLG A 4X .025 R .115 . Rating: 1 ★ (4 votes)
Advanced Semiconductor CBSL30 - NPN SILICON RF POWER TRANSISTOR CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The Rating: 1 ★ (4 votes)
KEC E50A2CBS - STACK SILICON DIFFUSED DIODE SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : V Rating: 1 ★ (4 votes)
Advanced Semiconductor CBSL1 - NPN SILICON RF POWER TRANSISTOR CBSL1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1 is Designed for UHF Class A Amplifier Applications in Cellular Base Station Equipmen Rating: 1 ★ (3 votes)
Advanced Semiconductor CBSL100 - NPN SILICON RF POWER TRANSISTOR CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG (C) .080x45° A B FULL R (4X).060 R E Rating: 1 ★ (3 votes)
Advanced Semiconductor CBSL150 - NPN SILICON RF POWER TRANSISTOR CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYL Rating: 1 ★ (3 votes)
Advanced Semiconductor CBSL30B - NPN SILICON RF POWER TRANSISTOR CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30B is Designed for PACKAGE STYLE .250 BAL FLG .020 x 45° B A Ø.130 NOM. .050 x 45° Rating: 1 ★ (3 votes)
Advanced Semiconductor CBSL6 - NPN SILICON RF POWER TRANSISTOR CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G Rating: 1 ★ (3 votes)
Advanced Semiconductor CBSL60B - NPN SILICON RF POWER TRANSISTOR CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FULL R .100x45° C D Rating: 1 ★ (3 votes)
Toshiba CBS10S30 - Schottky Barrier Diode Schottky Barrier Diode Silicon Epitaxial CBS10S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit CBS10S30 CST2B 1: Cathod Rating: 1 ★ (3 votes)