| Part Number | Description | Manufacture |
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Radiation Hardened Dual JK Flip-Flop • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: 100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: 1 x 1012 RAD (Si)/s • Dose Rate Upset |
 Intersil Corporation |
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Radiation Hardened Dual J-K Flip-Flop • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96704 and Intersil’sIntersil QM Plan • 1.25 Micron Radiation Hardened SOS CMOS • Total Dose . . . . . . . . . . . . . |
Intersil Corporation |
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Dual Variable-Reluctance Sensor Interface IC Dual Channel Capability Built –In Test Mode On –Chip Input Voltage Clamping Works from 5.0 V Supply Accurate Built –In Hysteresis VCC PIN CONNECTIONS AND MARKING DIAGRAM INAdj IN1 IN2 GND A WL, L YY, Y WW, W OUT1 To µP + – 1 1124 ALYW 8 VCC OUT1 OUT |
 ON Semiconductor |
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SiC Schottky Barrier Diodes 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage |
 Rohm |
