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2SD1118 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor 2SD1118 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 300V(M.D1118 - 2SD1118
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fuji.