D1416 Datasheet | Specifications & PDF Download

a Quad-SHARC® DSP Multiprocessor Family AD14160/AD14160L PERFORMANCE FEATURES FUNCTIONAL BLOCK DIAGRAM ADSP-21060 Core Processor (. . . ؋4) 480

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltag

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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    Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
                  

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www.DataSheet4U.com EID1416-12 UPDATED 12/06/2006 14.0-16.0 GHz 12-Watt Internally Matched Power FET Excelics FEATURES • • • • • • 14.0– 16.0GHz Ba

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a Quad-SHARC® DSP Multiprocessor Family AD14160/AD14160L PERFORMANCE FEATURES FUNCTIONAL BLOCK DIAGRAM ADSP-21060 Core Processor (. . . ؋4) 480

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19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hit

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    Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
                  

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    Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
                  

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www.DataSheet4U.com EID1416A1-8 UPDATED 09/20/2007 14.0-16.0GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • 14.0-16.0GHz Bandwidth Inp

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    Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
                  

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    Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
                  

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    Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
                  

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    Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations
                  

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt

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