2SD1416 Silicon NPN Darlington Power Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

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Datasheet Specifications

Part number: 2SD1416
Manufacturer: INCHANGE
File Size: 213.25 KB
Datasheet: 2SD1416-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Hammer driver,pulse motor drive applications.
* High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuou

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2SD1416 Silicon NPN Darlington Power Transistor INCHANGE

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