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2SD1416 Datasheet - INCHANGE

2SD1416 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A *High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V *Complement to Type 2SB1021 *Minimum Lot-to-Lot variations for robust device performance and re.

2SD1416 Datasheet (213.25 KB)

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Datasheet Details

Part number:

2SD1416

Manufacturer:

INCHANGE

File Size:

213.25 KB

Description:

Silicon npn darlington power transistor.

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2SD1416 Silicon NPN Darlington Power Transistor INCHANGE

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