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2SD1416 - Silicon NPN Darlington Power Transistor

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Part number 2SD1416
Manufacturer INCHANGE
File Size 213.25 KB
Description Silicon NPN Darlington Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Complement to Type 2SB1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Hammer driver,pulse motor drive applications. High power switching applications.

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