2SD1411A Datasheet - Toshiba Semiconductor

2SD1411A NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power.

2SD1411A_ToshibaSemiconductor.pdf