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2SD1407A Silicon NPN Transistor

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Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm * High.

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Applications

* Industrial Applications Unit: mm
* High breakdown voltage: VCEO = 100 V
* Low collector saturation voltage: VCE (sat) = 2.0 V (max)
* Complementary to 2SB1016A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V

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