Datasheet4U Logo Datasheet4U.com

2SD1407A Datasheet - Toshiba Semiconductor

2SD1407A Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 5 A B.

2SD1407A Datasheet (119.81 KB)

Preview of 2SD1407A PDF

Datasheet Details

Part number:

2SD1407A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

119.81 KB

Description:

Silicon npn transistor.

📁 Related Datasheet

2SD1407 Silicon NPN Transistor (Toshiba)

2SD1407 NPN Transistor (INCHANGE)

2SD1407 SILICON POWER TRANSISTOR (SavantIC)

2SD1400 NPN Transistor (INCHANGE)

2SD1401 NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR (Sanyo Semicon Device)

2SD1402 NPN Transistor (INCHANGE)

2SD1402 SILICON POWER TRANSISTOR (SavantIC)

2SD1403 NPN Transistor (INCHANGE)

2SD1403 NPN Triple Diffused Planar Silicon Transistor (Sanyo)

2SD1403 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SD1407A Silicon NPN Transistor Toshiba Semiconductor

Image Gallery

2SD1407A Datasheet Preview Page 2 2SD1407A Datasheet Preview Page 3

2SD1407A Distributor