2SD1412A Datasheet - Toshiba Semiconductor

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2SD1412A Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm .

2SD1412A_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD1412A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

154.32 KB

Description:

Silicon NPN Transistor

Applications

* Power Amplifier Applications 2SD1412A Unit: mm
* Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V

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2SD1412A Silicon NPN Transistor Toshiba Semiconductor

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