Datasheet Details
- Part number
- 2SD1412A
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 154.32 KB
- Datasheet
- 2SD1412A_ToshibaSemiconductor.pdf
- Description
- Silicon NPN Transistor
2SD1412A Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm .
2SD1412A Applications
* Power Amplifier Applications
2SD1412A
Unit: mm
* Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 70 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
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