Datasheet4U Logo Datasheet4U.com

2SD1412A Datasheet - Toshiba Semiconductor

2SD1412A - Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC

2SD1412A_ToshibaSemiconductor.pdf

Preview of 2SD1412A PDF
2SD1412A Datasheet Preview Page 2 2SD1412A Datasheet Preview Page 3

Datasheet Details

Part number:

2SD1412A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

154.32 KB

Description:

Silicon npn transistor.

📁 Related Datasheet

📌 All Tags