2SD1412A Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm .

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Datasheet Specifications

Part number: 2SD1412A
Manufacturer: Toshiba ↗ Semiconductor
File Size: 154.32 KB
Datasheet: 2SD1412A_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Power Amplifier Applications 2SD1412A Unit: mm
* Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V

2SD1412A Distributors

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2SD1412A Silicon NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SD1412A-like datasheet