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2SD1417 - NPN Transistor

2SD1417 Description

isc Silicon NPN Darlington Power Transistor 2SD1417 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A). Low Collector Satur.

2SD1417 Applications

* Power amplifier and switching applications
* Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Con

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Datasheet Details

Part number
2SD1417
Manufacturer
INCHANGE
File Size
208.35 KB
Datasheet
2SD1417-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1417-like datasheet