2SD1417 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD1417 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A). Low Collector Satur.

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Datasheet Specifications

Part number: 2SD1417
Manufacturer: INCHANGE
File Size: 208.35 KB
Datasheet: 2SD1417-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier and switching applications
* Hammer drive,pulse motor drive applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Con

2SD1417 Distributors

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2SD1417 NPN Transistor INCHANGE

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