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2SD1410A Datasheet - Toshiba Semiconductor

2SD1410A Silicon NPN Transistor

2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1410A High Voltage Switching Applications Industrial Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 250 V Emitter-base voltage VEBO 5 V Collector current IC 6 A Base current IB 1 A Collector power dissipation Ta = 25°C T.

2SD1410A Datasheet (139.89 KB)