2SD1410A Datasheet, Transistor, Toshiba Semiconductor

PDF File Details

Part number:

2SD1410A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

139.89kb

Download:

📄 Datasheet

Description:

Silicon npn transistor.

Datasheet Preview: 2SD1410A 📥 Download PDF (139.89kb)
Page 2 of 2SD1410A Page 3 of 2SD1410A

2SD1410A Application

  • Applications Industrial Applications Unit: mm
  • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A) Absolute Maximum Ratings (Ta

TAGS

2SD1410A
Silicon
NPN
Transistor
Toshiba Semiconductor

📁 Related Datasheet

2SD1410 - NPN Transistor (Toshiba)
2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Ga.

2SD1410 - Silicon NPN Darlington Power Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation V.

2SD1411 - NPN Transistor (Toshiba)
: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . Low Saturation Voltage : .

2SD1411 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.

2SD1411 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 .. DESCRIPTION ·With TO-220Fa package ·Low sa.

2SD1411A - NPN Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Lo.

2SD1412 - NPN Transistor (Toshiba)
: SILICON NPN TRIPLE DIFFUSED TYPE * 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. 7.0 03.2±O.2 F.

2SD1412 - Silicon NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.

2SD1412A - Silicon NPN Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm • Lo.

2SD1413 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Volt.

Stock and price

Toshiba America Electronic Components
Quest Components
2SD1410A
704 In Stock
Qty : 447 units
Unit Price : $1.2
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts