2SD1412 Datasheet - Toshiba

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2SD1412 NPN Transistor

: SILICON NPN TRIPLE DIFFUSED TYPE * 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS.POWER AMPLIFIER APPLICATIONS.Unit in mm 10.3MAX.7.0 03.2±O..

2SD1412-Toshiba.pdf

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Datasheet Details

Part number:

2SD1412

Manufacturer:

Toshiba ↗

File Size:

118.73 KB

Description:

NPN Transistor

Features

* . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019 at Ic=4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VcBO VCEO VeBO RATING 70 50 UNIT
* sJ Ii-t Je5 O iri 0> CS +1 o s Hto 1 1.2 N' 1.4 +

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2SD1412 NPN Transistor Toshiba

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