Datasheet Specifications
- Part number
- 2SD1412
- Manufacturer
- Toshiba ↗
- File Size
- 118.73 KB
- Datasheet
- 2SD1412-Toshiba.pdf
- Description
- NPN Transistor
Description
: SILICON NPN TRIPLE DIFFUSED TYPE * 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS.POWER AMPLIFIER APPLICATIONS.Unit in mm 10.3MAX.7.0 03.2±O..
Features
* . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019 at Ic=4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VcBO VCEO VeBO RATING 70 50 UNIT2SD1412 Distributors
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