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2SD1412

NPN Transistor

2SD1412 Features

* . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019 at Ic=4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VcBO VCEO VeBO RATING 70 50 UNIT

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2SD1412 Datasheet (118.73 KB)

Preview of 2SD1412 PDF

Datasheet Details

Part number:

2SD1412

Manufacturer:

Toshiba ↗

File Size:

118.73 KB

Description:

Npn transistor.
: SILICON NPN TRIPLE DIFFUSED TYPE
* 2SD1412 HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. 7.0 03.2±O..

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2SD1412 NPN Transistor Toshiba

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