2SD1412 Datasheet, Transistor, Toshiba

2SD1412 Features

• Transistor . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complementary to 2SB1019 at Ic=4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-B

PDF File Details

Part number:

2SD1412

Manufacturer:

Toshiba ↗

File Size:

118.73kb

Download:

📄 Datasheet

Description:

Npn transistor.

2SD1412 Application

• Applications POWER AMPLIFIER APPLICATIONS. Unit in mm 10.3MAX. 7.0 03.2±O.2 FEATURES . Low Saturation Voltage : VcE(sat)=0.4V(Max. ) . Complement

TAGS

2SD1412

Toshiba

📁 Related Datasheet

2SD1410 - NPN Transistor (Toshiba)
2SD1410 SILICON NPNTRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Ga.

2SD1410 - Silicon NPN Darlington Power Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation V.

2SD1410A - Silicon NPN Transistor (Toshiba Semiconductor)
2SD1410A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1410A High Voltage Switching Applications Industrial Applications Unit:.

2SD1411 - NPN Transistor (Toshiba)
: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . Low Saturation Voltage : .

2SD1411 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.

2SD1411 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1411 .. DESCRIPTION ·With TO-220Fa package ·Low sa.

2SD1411A - NPN Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Lo.

2SD1412 - Silicon NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.

2SD1412A - Silicon NPN Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm • Lo.

2SD1413 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Volt.