2SD1405 Datasheet, Transistor, Toshiba

✔ 2SD1405 Features

. High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in

✔ 2SD1405 Application

FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic

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Part number:

2SD1405

Manufacturer:

Toshiba ↗

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93.78kb

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📄 Datasheet

Description:

Silicon npn transistor.

📥 Download PDF (93.78kb)

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Samtec Inc

Conn Board Stacker HDR 96 POS 2mm Solder ST Thru-Hole - Bulk (Alt: TW-48-12-S-D-140-500)

Avnet Americas

TW-48-12-S-D-140-500

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2SD1405 Silicon NPN Transistor Toshiba