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2SD1408 - NPN Transistor

2SD1408 Description

isc Silicon NPN Power Transistor 2SD1408 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Complement to.

2SD1408 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

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Datasheet Details

Part number
2SD1408
Manufacturer
INCHANGE
File Size
207.51 KB
Datasheet
2SD1408-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1408-like datasheet