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2SD1409 Datasheet - Toshiba

Silicon NPN Transistor

2SD1409 Features

* . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction with Built-in 3ase-Emitter Shunt Resistor. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 600 400 UNIT V V INDUSTRIAL APPLICATIONS Unit in mm

2SD1409 Datasheet (91.70 KB)

Preview of 2SD1409 PDF

Datasheet Details

Part number:

2SD1409

Manufacturer:

Toshiba ↗

File Size:

91.70 KB

Description:

Silicon npn transistor.

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2SD1409 Silicon NPN Transistor Toshiba

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